24.12.2010

In–CuInS₂ nanocomposite film prepared by pulsed laser deposition using a single source precursor

Wolfgang Bensch^a^,^,, Enrique Quiroga-González^a, Lorenz Kienle^b, Viola Duppel^c, Doh-Kwon Lee^d and Jürgen Janek^d

^a Institute for Inorganic Chemistry of the University of Kiel, Max-Eyth-Str. 2, 24118 Kiel, Germany

^b Institute of Material Science of the University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany

^c Max Planck Institue for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany

^d Institute for Physical Chemistry of the University of Giessen, Heinrich-Buff-Ring 58, 35392 Giessen, Germany

Received 28 April 2010;

revised 19 July 2010;

accepted 8 August 2010.

Available online 17 August 2010.

Abstract

An In–CuInS₂ nanocomposite film has been prepared by Pulsed Laser Deposition applying a single source precursor. X-ray powder diffraction, Raman spectroscopy and transmission electron microscopy observations evidence that the film consists of nanocrystals of elemental In and chalcopyrite type CuInS₂ with sizes of 36 and 17 nm respectively. A detailed analysis of the electrical performance of the film suggests that the nanoparticles are in Ohmic contact and that the resistivity is mainly caused by the CuInS₂ nanocrystals which are less conducting than the pure In metal. Irradiation of the film with light shows a photoconductive effect mainly with wavelengths larger than 515 nm and smaller than 850 nm.

Abstract

Graphical abstract